Growth of Interfacial Layer between Germanium and Aluminium Oxide
| dc.contributor.author | Nik Amni Fathi bt Nik Zaini Fathi | |
| dc.date.accessioned | 2026-10-14T02:45:21Z | |
| dc.date.issued | 2018 | |
| dc.description | This research review and analyze the growth of interfacial layer (IL) between high-k dielectric material and germanium (Ge). For this research, aluminium oxide (Al2O3) was used as the high-k dielectric material with 99.99% pure aluminium. The effect of wet chemical cleaning was investigated on the growth kinetic of interfacial layer by using Field Emission Scanning Electron Microscopy (FESEM). Two different wafer cleaning solution; hydrochloric acid, HCl(30%) and hydrofluoric acid, HF (49%) were used on Ge wafers. HF cleaning at higher concentration has been proven to decrease Ge oxide prior to high-k dielectric material deposition on Ge substrate. The growth of IL between HCl and HF shows not much different. Intermixing between Al2O3 and Ge were enhanced with increasing post deposition annealing (PDA) temperature. The chemical bonding features have been discussed in detail. X-ray Photoelectron Spectroscopy (XPS) measurement were used to evaluate the composition between Ge and Al2O3 interface. None of the existing growth model can be used to explain the interfacial layer growth and it may cause by the formation of intermixing at Ge and Al2O3 interface. Therefore, the evolution process of the formation intermixing during post deposition annealing were discussed. | |
| dc.identifier.uri | https://scholarhub.unimas.my/handle/123456789/3021 | |
| dc.language.iso | English | |
| dc.publisher | UNIVERSITI MALAYSIA SARAWAK | |
| dc.relation.ispartofseries | Faculty of Engineering | |
| dc.subject | Interfacial layer, germanium, high-k dielectric, post-deposition annealing | |
| dc.title | Growth of Interfacial Layer between Germanium and Aluminium Oxide | |
| dc.type | Masters |